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IRF740 Datasheet power MOSFET
N - CHANNEL 400V - 0.48 Ω - 10 A - TO-220
PowerMESH MOSFET
This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY process. This technology matches and improves the performances compared with standard parts from various sources.
APPLICATIONS
# HIGH CURRENT SWITCHING
# UNINTERRUPTIBLE POWER SUPPLY (UPS
# DC/DC COVERTERS FOR TELECOM,
# INDUSTRIAL, AND LIGHTING EQUIPMENT
MOSFET, N, 400V, 10A, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:400V; Current, Id Cont:10A; Resistance, Rds On:0.55ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220AB; Termination Type:Through Hole; Current, Idm Pulse:40A; Power Dissipation:125W; Power, Pd:125W; Thermal Resistance, Junction to Case A:1 C/W; Voltage, Vds Max:400V
IRF740 Datasheet power MOSFET
PowerMESH MOSFET
This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY process. This technology matches and improves the performances compared with standard parts from various sources.
APPLICATIONS
# HIGH CURRENT SWITCHING
# UNINTERRUPTIBLE POWER SUPPLY (UPS
# DC/DC COVERTERS FOR TELECOM,
# INDUSTRIAL, AND LIGHTING EQUIPMENT
MOSFET, N, 400V, 10A, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:400V; Current, Id Cont:10A; Resistance, Rds On:0.55ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220AB; Termination Type:Through Hole; Current, Idm Pulse:40A; Power Dissipation:125W; Power, Pd:125W; Thermal Resistance, Junction to Case A:1 C/W; Voltage, Vds Max:400V
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